Datasheet

NXP Semiconductors
PHPT61002PYC
100 V, 2 A PNP high power bipolar transistor
PHPT61002PYC All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 10 January 2014 7 / 15
aaa-010430
200
300
100
400
500
h
FE
0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
V
CE
= −1 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
V
CE
(V)
0 -5-4-2 -3-1
aaa-010431
-1.0
-1.5
-0.5
-2.0
-2.5
I
C
(A)
0
I
B
= -50 mA
-45
-40
-35
-30
-5
-10
-15
-20
-25
T
amb
= 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
aaa-010432
-0.8
-0.4
-1.2
-1.6
V
BE
(V)
0
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
V
CE
= −2 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 6. Base-emitter voltage as a function of collector
current; typical values
aaa-010433
-0.6
-0.8
-0.4
-1.0
-1.2
V
BEsat
(V)
-0.2
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 7. Base-emitter saturation voltage as a function of
collector current; typical values