Datasheet
PEMH11_PUMH11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 6 — 29 November 2011 8 of 14
NXP Semiconductors
PEMH11; PUMH11
NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 k
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
f=1MHz; T
amb
=25CV
CE
=5V; T
amb
=25C
Fig 8. Collector capacitance as a function of
collector-base voltage; typical values
Fig 9. Transition frequency as a function of collector
current; typical values of built-in transistor
V
CB
(V)
0504020 3010
006aac772
1
2
3
C
c
(pF)
0
006aac757
I
C
(mA)
10
-1
10
2
101
10
2
10
3
f
T
(MHz)
10
Fig 10. Package outline PEMH11 (SOT666) Fig 11. Package outline PUMH11 (SOT363/SC-88)
Dimensions in mm
04-11-08
1.7
1.5
1.7
1.5
1.3
1.1
1
0.18
0.08
0.27
0.17
0.5
pin 1 index
123
456
0.6
0.5
0.3
0.1
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
132
465