Datasheet

2004 Jan 12 4
NXP Semiconductors Product data sheet
12 V PNP loadswitch PEMF21
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 µs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Transistor TR1
I
CBO
collector-base cut-off current V
CB
= −15 V; I
E
= 0 − − −100 nA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 − − −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −10 mA 200 − −
V
CEsat
collector-emitter saturation voltage I
C
= −200 mA; I
B
= −10 mA − − −250 mV
R
CEsat
equivalent on-resistance I
C
= −500 mA; I
B
= −50 mA; note 1 − 300 500 mΩ
V
BEsat
base-emitter saturation voltage I
C
= −500 mA; I
B
= −50 mA; note 1 − − −1.1 V
V
BEon
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −100 mA; note 1 − − −0.9 V
f
T
transition frequency I
C
= −100 mA; V
CE
= −5 V;
f
= 100 MHz
100 280 − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= i
e
= 0; f = 1 MHz − − 10 pF
Transistor TR2
I
CBO
collector-base cut-off current V
CB
= 50 V; I
E
= 0 − − 100 nA
I
CEO
collector-emitter cut-off current V
CE
= 30 V; I
B
= 0 − − 1 µA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 − − 400 µA
h
FE
DC current gain V
CE
= 5 V; I
C
= 5 mA 30 − −
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA − − 300 mV
V
i(off)
input-off voltage V
CE
= 5 V; I
C
= 100 µA − − 0.5 V
V
i(on)
input-on voltage V
CE
= 0.3 V; I
C
= 10 mA 3 − − V
R1 input resistor 7 10 13 kΩ
resistor ratio 0.8 1 1.2
C
c
collector capacitance V
CB
= 10 V; I
E
= i
e
= 0; f = 1 MHz
− −
2.5 pF
R2
R1
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