Datasheet

2004 Jan 12 3
NXP Semiconductors Product data sheet
12 V PNP loadswitch PEMF21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. Reflow soldering is the only recommended soldering method.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Transistor TR1
V
CBO
collector-base voltage open emitter − −15 V
V
CEO
collector-emitter voltage open base − −12 V
V
EBO
emitter-base voltage open collector − −6 V
I
C
collector current (DC) − −500 mA
I
CM
peak collector current − −1 A
I
BM
peak base current − −100 mA
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 200 mW
Transistor TR2
V
CBO
collector-base voltage open emitter − 50 V
V
CEO
collector-emitter voltage open base − 50 V
V
EBO
emitter-base voltage open collector − 10 V
V
i
input voltage
positive − +40 V
negative − −10 V
I
O
output current (DC) − 100 mA
I
CM
peak collector current − 100 mA
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 200 mW
Per device
P
tot
total power dissipation T
amb
= 25 °C; note 1 − 300 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per device
R
th(j-a)
thermal resistance from junction to
ambient
notes 1 and 2 416 K/W