Datasheet

PDTC143E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 8 December 2011 14 of 17
NXP Semiconductors
PDTC143E series
NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 4.7 k
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTC143E_SER v.10 20111208 Product data sheet - PDTC143E_SERIES v.9
Modifications:
The format of this document has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type numbers PDTC143EEF, PDTC143EK and PDTC143ES removed.
Section 1 “Product profile: updated
Section 4 “Marking: updated
Figure 1 to 11: added
Section 6 “Thermal characteristics: updated
Table 8 “Characteristics: V
i(on)
redefined to V
I(on)
on-state input voltage, V
i(off)
redefined to
V
I(off)
off-state input voltage, I
CEO
updated, f
T
added
Section 8 “Test information: added
Section 9 “Package outline: superseded by minimized package outline drawings
Section 10 “Packing information: added
Section 11 “Soldering: added
Section 13 “Legal information: updated
PDTC143E_SERIES v.9 20040805 Product data sheet - PDTC143E_SERIES v.8
PDTC143E_SERIES v.8 20040318 Product specification - PDTC143E_SERIES v.7
PDTC143E_SERIES v.7 20040112 Product specification - PDTC143E_SERIES v.6
PDTC143E_SERIES v.6 20030910 Product specification - PDTC143E_SERIES v.5
PDTC143E_SERIES v.5 20030410 Product specification - -