Datasheet

PDTC124X_SER_7 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 07 — 16 November 2009 5 of 12
NXP Semiconductors
PDTC124X series
NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 μm copper strip line, standard footprint.
7. Characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT416
[1]
--833K/W
SOT490
[1][2]
--500K/W
SOT346
[1]
--500K/W
SOT883
[2][3]
--500K/W
SOT54
[1]
--250K/W
SOT23
[1]
--500K/W
SOT323
[1]
--625K/W
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=30V; I
B
=0A - - 1 μA
V
CE
=30V; I
B
=0A;
T
j
=150°C
--50μA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 120 μA
h
FE
DC current gain V
CE
=5V; I
C
=5mA 80 - -
V
CEsat
collector-emitter
saturation voltage
I
C
=10mA; I
B
= 0.5 mA - - 150 mV
V
I(off)
off-state input voltage V
CE
=5V; I
C
=100μA-0.80.5V
V
I(on)
on-state input voltage V
CE
= 300 mV; I
C
=2mA 2 1.1 - V
R1 bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 1.7 2.1 2.6
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
--2.5pF