Datasheet

PDTC123Y_SER_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 16 November 2009 5 of 11
NXP Semiconductors
PDTC123Y series
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
7. Characteristics
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=30V; I
B
=0A - - 1 μA
V
CE
=30V; I
B
=0A;
T
j
=150°C
--50μA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 700 μA
h
FE
DC current gain V
CE
=5V; I
C
=5mA 35 - -
V
CEsat
collector-emitter
saturation voltage
I
C
=10 mA; I
B
= 0.5 mA - - 150 mV
V
I(off)
off-state input voltage V
CE
=5V; I
C
=100μA - 0.75 0.3 V
V
I(on)
on-state input voltage V
CE
= 300 mV; I
C
= 20 mA 2.5 1.15 - V
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 3.6 4.5 5.5
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
--2pF