Datasheet

2004 Aug 13 2
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
PDTC123J series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
SYMBOL PARAMETER TYP. MAX. UNIT
V
CEO
collector-emitter
voltage
− 50 V
I
O
output current (DC) − 100 mA
R1 bias resistor 2.2 − kΩ
R2 bias resistor 47 − kΩ
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
PACKAGE
MARKING CODE PNP COMPLEMENT
PHILIPS EIAJ
PDTC123JE SOT416 SC-75 28 PDTA123JE
PDTC123JEF SOT490 SC-89 28 PDTA123JEF
PDTC123JK SOT346 SC-59 49 PDTA123JK
PDTC123JM SOT883 SC-101 DW PDTA123JM
PDTC123JS SOT54 (TO-92) SC-43 TC123J PDTA123JS
PDTC123JT SOT23 − *25
(1)
PDTA123JT
PDTC123JU SOT323 SC-70 *49
(1)
PDTA123JU