Datasheet

2004 Aug 13 5
NXP Semiconductors Product data sheet
NPN resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
PDTC123J series
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= 50 V; I
E
= 0 − − 100 nA
I
CEO
collector-emitter cut-off current V
CE
= 30 V; I
B
= 0 − − 1 μA
V
CE
= 30 V; I
B
= 0; T
j
= 150 °C − − 50 μA
I
EBO
emitter-base cut-off current V
EB
= 5 V; I
C
= 0 − − 180 μA
h
FE
DC current gain V
CE
= 5 V; I
C
= 10 mA 100 − −
V
CEsat
collector-emitter saturation voltage I
C
= 5 mA; I
B
= 0.25 mA − − 100 mV
V
i(off)
input-off voltage I
C
= 100 μA; V
CE
= 5 V − 0.6 0.5 V
V
i(on)
input-on voltage I
C
= 5 mA; V
CE
= 0.3 V 1.1 0.75 − V
R1 input resistor 1.54 2.2 2.86 kΩ
resistor ratio 17 21 26
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz − − 2.5 pF
R2
R1
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