Datasheet

PDTC114T_SER_8 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 08 — 9 February 2006 5 of 11
Philips Semiconductors
PDTC114T series
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open
7. Characteristics
Table 8: Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=30V; I
B
=0A - - 1 µA
V
CE
=30V; I
B
=0A;
T
j
= 150 °C
--50µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=5V; I
C
= 1 mA 200 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA - - 150 mV
R1 bias resistor 1 (input) 7 10 13 kΩ
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- - 2.5 pF
V
CE
=5V
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa552
200
400
600
h
FE
0
I
C
(mA)
10
−1
10
2
101
(1)
(2)
(3)
006aaa553
I
C
(mA)
10
−1
10
2
101
10
−1
1
V
CEsat
(V)
10
−2
(1)
(2)
(3)