Datasheet

PDTC114T_SER_8 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 08 — 9 February 2006 4 of 11
Philips Semiconductors
PDTC114T series
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 50 V
V
CEO
collector-emitter voltage open base - 50 V
V
EBO
emitter-base voltage open collector - 5 V
I
O
output current - 100 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
SOT416
[1]
- 150 mW
SOT346
[1]
- 250 mW
SOT883
[2] [3]
- 250 mW
SOT54
[1]
- 500 mW
SOT23
[1]
- 250 mW
SOT323
[1]
- 200 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT416
[1]
- - 833 K/W
SOT346
[1]
- - 500 K/W
SOT883
[2] [3]
- - 500 K/W
SOT54
[1]
- - 250 K/W
SOT23
[1]
- - 500 K/W
SOT323
[1]
- - 625 K/W