Datasheet

PDTB123YT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 30 August 2010 3 of 10
NXP Semiconductors
PDTB123YT
PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-250mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--500K/W
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
V
CB
= −40 V; I
E
=0A - - −100 nA
V
CB
= −50 V; I
E
=0A - - −100 nA
I
CEO
collector-emitter
cut-off current
V
CE
= −50 V; I
B
=0A - - −0.5 μA
I
EBO
emitter-base
cut-off current
V
EB
= −5V; I
C
=0A - - −0.65 mA
h
FE
DC current gain V
CE
= −5V;
I
C
= −50 mA
70 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −50 mA;
I
B
= −2.5 mA
--−0.3 V
V
I(off)
off-state input voltage V
CE
= −5V;
I
C
= −100 μA
−0.4 −0.6 −1.0 V
V
I(on)
on-state input voltage V
CE
= −0.3 V;
I
C
= −20 mA
−0.5 −1.0 −1.4 V
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
R2/R1 bias resistor ratio 4.1 4.55 5
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A;
f=100MHz
-11-pF