Datasheet

PDTB123YT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 30 August 2010 2 of 10
NXP Semiconductors
PDTB123YT
PNP 500 mA, resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 input (base)
2 GND (emitter)
3 output (collector)
006aaa14
4
12
3
sym003
3
2
1
R1
R2
Table 3. Ordering information
Type number Package
Name Description Version
PDTB123YT - plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
PDTB123YT *7Y
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −50 V
V
CEO
collector-emitter voltage open base - −50 V
V
EBO
emitter-base voltage open collector - −5V
V
I
input voltage
positive - +5 V
negative - −12 V
I
O
output current - −500 mA