Datasheet

PDTB123ET All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 22 September 2010 7 of 10
NXP Semiconductors
PDTB123ET
PNP 500 mA resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTB123ET v.3 20100922 Product data sheet - PDTB123E_SER_2
Modifications:
• Type numbers PDTB123EK and PDTB123ES deleted.
• Table 7 “Characteristics”: unit for V
CEsat
changed from mV to V.
• Section 8 “Test information”: added.
• Section 11 “Soldering”: added.
• Section 13 “Legal information”: updated.
PDTB123E_SER_2 20091116 Product data sheet - PDTB123E_SER_1
PDTB123E_SER_1 20050427 Product data sheet - -