Datasheet

2004 Aug 05 5
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 22 kΩ
PDTA144W series
THERMAL CHARACTERISTICS
Note
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions.; FR4 with 60 μm copper strip line.
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient T
amb
≤ 25 °C
SOT54 note 1 250 K/W
SOT23 note 1 500 K/W
SOT346 note 1 500 K/W
SOT323 note 1 625 K/W
SOT416 note 1 830 K/W
SOT490 notes 1 and 2 500 K/W
SOT883 notes 2 and 3 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −50 V; I
E
= 0 A − − −100 nA
I
CEO
collector-emitter cut-off current V
CE
= −30 V; I
B
= 0 A − − −1 μA
V
CE
= −30 V; I
B
= 0 A; T
j
= 150 °C − − −50 μA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 A − − −110 μA
h
FE
DC current gain V
CE
= −5 V; I
C
= −5 mA 60 − −
V
CEsat
collector-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA − − −150 mV
V
i(off)
input-off voltage I
C
= −100 μA; V
CE
= −5 V − −1.7 −1.2 V
V
i(on)
input-on voltage I
C
= −2 mA; V
CE
= −0.3 V −4 −2.7 − V
R1 input resistor 33 47 61 kΩ
resistor ratio 0.37 0.47 0.57
C
c
collector capacitance I
E
= i
e
= 0 A; V
CB
= −10 V;
f
= 1 MHz
− − 3 pF
R2
R1
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