Datasheet

PDTA143Z_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 7 — 5 December 2011 7 of 17
NXP Semiconductors
PDTA143Z series
PNP resistor-equipped transistors; R1 = 4.7 k, R2 = 47 k
7. Characteristics
[1] Characteristics of built-in transistor
Table 8. Characteristics
T
amb
=25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= 50 V; I
E
=0A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
= 30 V; I
B
=0A - - 1 A
V
CE
= 30 V; I
B
=0A;
T
j
= 150 C
--5 A
I
EBO
emitter-base cut-off
current
V
EB
= 5V; I
C
=0A - - 170 A
h
FE
DC current gain V
CE
= 5V; I
C
= 10 mA 100 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 5mA; I
B
= 0.25 mA - - 100 mV
V
I(off)
off-state input voltage V
CE
= 5V; I
C
= 100 A- 0.6 0.5 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 5mA 1.3 0.9 - V
R1 bias resistor 1 (input) 3.3 4.7 6.1 k
R2/R1 bias resistor ratio 8 10 12
C
c
collector capacitance V
CB
= 10 V; I
E
=i
e
=0A;
f=1MHz
--3pF
f
T
transition frequency V
CE
= 5V; I
C
= 10 mA;
f = 100 MHz
[1]
-180-MHz