Datasheet

PDTA124X_SER_8 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 08 — 3 September 2009 5 of 12
NXP Semiconductors
PDTA124X series
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
7. Characteristics
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
SOT416
[1]
- - 833 K/W
SOT490
[1][2]
- - 500 K/W
SOT346
[1]
- - 500 K/W
SOT883
[2][3]
- - 500 K/W
SOT54
[1]
- - 250 K/W
SOT23
[1]
- - 500 K/W
SOT323
[1]
- - 625 K/W
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −50 V; I
E
=0A - - −100 nA
I
CEO
collector-emitter cut-off
current
V
CE
= −30 V; I
B
=0A - - −1 µA
V
CE
= −30 V; I
B
=0A;
T
j
= 150 °C
--−50 µA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
=0A - - −120 µA
h
FE
DC current gain V
CE
= −5 V; I
C
= −5mA 80 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
--−150 mV
V
I(off)
off-state input voltage V
CE
= −5 V; I
C
= −100 µA- −0.8 −0.5 V
V
I(on)
on-state input voltage V
CE
= −0.3 V; I
C
= −2mA −2 −1.1 - V
R1 bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 1.7 2.1 2.6
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
--3pF