Datasheet

2004 Aug 02 5
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
PDTA124E series
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −50 V; I
E
= 0 − − −100 nA
I
CEO
collector-emitter cut-off current V
CE
= −30 V; I
B
= 0 − − −1 μA
V
CE
= −30 V; I
B
= 0; T
j
= 150 °C − − −50 μA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 − − −180 μA
h
FE
DC current gain V
CE
= −5 V; I
C
= −5 mA 60 − −
V
CEsat
collector-emitter saturation voltage I
C
= −10 mA; I
B
= −0.5 mA − − −150 mV
V
i(off)
input-off voltage I
C
= −100 μA; V
CE
= −5 V − −1.1 −0.8 V
V
i(on)
input-on voltage I
C
= −5 mA; V
CE
= −0.3 V −2.5 −1.7 − V
R1 input resistor 15.4 22 28.6 kΩ
resistor ratio 0.8 1 1.2
C
c
collector capacitance I
E
= i
e
= 0; V
CB
= −10 V; f = 1 MHz − − 3 pF
R2
R1
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