Datasheet

2004 Aug 02 2
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
PDTA124E series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
SYMBOL PARAMETER TYP. MAX. UNIT
V
CEO
collector-emitter
voltage
− −50 V
I
O
output current (DC) − −100 mA
R1 bias resistor 22 − kΩ
R2 bias resistor 22 − kΩ
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
PACKAGE
MARKING CODE NPN COMPLEMENT
PHILIPS EIAJ
PDTA124EE SOT416 SC-75 05 PDTC124EE
PDTA124EEF SOT490 SC-89 3R PDTC124EEF
PDTA124EK SOT346 SC-59 05 PDTC124EK
PDTA124EM SOT883 SC-101 DH PDTC124EM
PDTA124ES SOT54 (TO-92) SC-43 TA124E PDTC124ES
PDTA124ET SOT23 − *05
(1)
PDTC124ET
PDTA124EU SOT323 SC-70 *05
(1)
PDTC124EU