Datasheet

2004 Jul 30 2
NXP Semiconductors Product data sheet
PNP resistor-equipped transistors;
R1 = 100 kΩ, R2 = 100 kΩ
PDTA115E series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
SYMBOL PARAMETER TYP. MAX. UNIT
V
CEO
collector-emitter
voltage
− −50 V
I
O
output current (DC) − −20 mA
R1 bias resistor 100 − kΩ
R2 bias resistor 100 − kΩ
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
PACKAGE
MARKING CODE NPN COMPLEMENT
PHILIPS EIAJ
PDTA115EE SOT416 SC-75 5E PDTC115EE
PDTA115EEF SOT490 SC-89 6B PDTC115EEF
PDTA115EK SOT346 SC-59 62 PDTC115EK
PDTA115EM SOT883 SC-101 F6 PDTC115EM
PDTA115ES SOT54 (TO-92) SC-43 TA115E PDTC115ES
PDTA115ET SOT23 − *AB
(1)
PDTC115ET
PDTA115EU SOT323 SC-70 *7C
(1)
PDTC115EU