Datasheet

PDTA114T_SER_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 20 April 2007 5 of 11
NXP Semiconductors
PDTA114T series
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
7. Characteristics
Table 8. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −50 V; I
E
=0A - - −100 nA
I
CEO
collector-emitter
cut-off current
V
CE
= −30 V; I
B
=0A - - −1 µA
V
CE
= −30 V; I
B
=0A;
T
j
= 150 °C
--−50 µA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −5 V; I
C
= −1 mA 200 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −10 mA;
I
B
= −0.5 mA
--−150 mV
R1 bias resistor 1 (input) 7 10 13 kΩ
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f = 1 MHz
--3pF
V
CE
= −5V
(1) T
amb
= 150 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa554
200
400
600
h
FE
0
I
C
(mA)
−10
−1
−10
2
−10−1
(1)
(2)
(3)
006aaa555
I
C
(mA)
−10
−1
−10
2
−10−1
−10
−1
−1
V
CEsat
(V)
−10
−2
(1)
(2)
(3)