Datasheet

PDTA114T_SER_7 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 07 — 20 April 2007 4 of 11
NXP Semiconductors
PDTA114T series
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −50 V
V
CEO
collector-emitter voltage open base - −50 V
V
EBO
emitter-base voltage open collector - −5V
I
O
output current - −100 mA
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −100 mA
P
tot
total power dissipation T
amb
≤ 25 °C
PDTA114TE
[1]
- 150 mW
PDTA114TK
[1]
- 250 mW
PDTA114TM
[2][3]
- 250 mW
PDTA114TS
[1]
- 500 mW
PDTA114TT
[1]
- 250 mW
PDTA114TU
[1]
- 200 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
PDTA114TE
[1]
- - 833 K/W
PDTA114TK
[1]
- - 500 K/W
PDTA114TM
[2][3]
- - 500 K/W
PDTA114TS
[1]
- - 250 K/W
PDTA114TT
[1]
- - 500 K/W
PDTA114TU
[1]
- - 625 K/W