Datasheet

PDTA114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 10 — 21 December 2011 7 of 17
NXP Semiconductors
PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
7. Characteristics
[1] Characteristics of built-in transistor.
Table 8. Characteristics
T
amb
=25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
V
CB
= 50 V; I
E
=0A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
= 30 V; I
B
=0A - - 1 A
V
CE
= 30 V; I
B
=0A;
T
j
= 150 C
--5 A
I
EBO
emitter-base
cut-off current
V
EB
= 5V; I
C
=0A - - 400 A
h
FE
DC current gain V
CE
= 5V; I
C
= 5mA 30 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA;
I
B
= 0.5 mA
--150 mV
V
I(off)
off-state input
voltage
V
CE
= 5V;
I
C
= 100 A
- 1.1 0.8 V
V
I(on)
on-state input
voltage
V
CE
= 0.3 V;
I
C
= 10 mA
2.5 1.8 - V
R1 bias resistor 1 (input) 7 10 13 k
R2/R1 bias resistor ratio 0.8 1.0 1.2
C
c
collector capacitance V
CB
= 10 V;
I
E
=i
e
=0A; f=1MHz
--3pF
f
T
transition frequency V
CE
= 5V;
I
C
= 10 mA;
f = 100 MHz
[1]
- 180 - MHz