Datasheet

PBSS9410PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 11 May 2010 6 of 15
NXP Semiconductors
PBSS9410PA
100 V, 2.7 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
V
CB
= −80 V; I
E
=0A - - −100 nA
V
CB
= −80 V; I
E
=0A;
T
j
= 150 °C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −80 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base
cut-off current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V
[1]
I
C
= −0.5 A 180 295 -
I
C
= −1 A 170 260 -
I
C
= −2 A 100 150 -
I
C
= −3 A 15 25 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −0.5 A; I
B
= −50 mA
[1]
- −45 −70 mV
I
C
= −1A; I
B
= −50 mA
[1]
- −95 −150 mV
I
C
= −2A; I
B
= −200 mA
[1]
- −125 −185 mV
I
C
= −2.7 A; I
B
= −135 mA
[1]
- −290 −450 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −2.7 A; I
B
= −135 mA
[1]
- 110 166 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −10 mA
[1]
- −0.75 −0.9 V
I
C
= −2.7 A; I
B
= −135 mA
[1]
- −0.95 −1.1 V
V
BEon
base-emitter
turn-on voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.75 −0.9 V
t
d
delay time V
CC
= −9V; I
C
= −2A;
I
Bon
= −0.1 A; I
Boff
=0.1A
-17-ns
t
r
rise time - 185 - ns
t
on
turn-on time - 202 - ns
t
s
storage time - 325 - ns
t
f
fall time - 190 - ns
t
off
turn-off time - 515 - ns
f
T
transition frequency V
CE
= −10 V;
I
C
= −100 mA;
f = 100 MHz
70 115 - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
- 4050pF