Datasheet

PBSS9110Y_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 6 of 13
NXP Semiconductors
PBSS9110Y
100 V, 1 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −80 V; I
E
=0 A - - −100 nA
V
CB
= −80 V; I
E
=0 A;
T
j
= 150 °C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −80 V; V
BE
=0 V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −4V; I
C
=0 A - - −100 nA
h
FE
DC current gain V
CE
= −5V; I
C
= −1 mA 150 - -
V
CE
= −5V; I
C
= −250 mA 150 - -
V
CE
= −5V; I
C
= −0.5 A
[1]
150 - 450
V
CE
= −5V; I
C
= −1A
[1]
125 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −250 mA; I
B
= −25 mA - - −120 mV
I
C
= −500 mA; I
B
= −50 mA - - −180 mV
I
C
= −1A; I
B
= −100 mA - - −320 mV
R
CEsat
equivalent
on-resistance
I
C
= −1A; I
B
= −100 mA
[1]
- 170 320 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −100 mA - - −1.1 V
V
BEon
base-emitter turn-on
voltage
I
C
= −1A; V
CE
= −5V - - −1.0 V
f
T
transition frequency I
C
= −50 mA; V
CE
= −10 V;
f=100MHz
100 - - MHz
C
c
collector capacitance I
E
=I
e
=0 A; V
CB
= −10 V;
f=1MHz
--17pF