Datasheet

PBSS9110Y_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 22 November 2009 5 of 13
NXP Semiconductors
PBSS9110Y
100 V, 1 A PNP low V
CEsat
(BISS) transistor
Mounted on FR4 PCB; mounting pad for collector = 1cm
2
(1) δ =1
(2) δ =0.75
(3) δ =0.5
(4) δ =0.33
(5) δ =0.2
(6) δ =0.1
(7) δ =0.05
(8) δ =0.02
(9) δ =0.01
(10) δ =0
Fig 3. Transient thermal impedance as a function of pulse time; typical values
001aaa797
10
1
10
2
10
3
Z
th
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
(9)
(8)
(7)
(6)
(5)
(4)
(1)
(10)
(2)
(3)