Datasheet

2004 May 13 9
NXP Semiconductors Product data sheet
100 V, 1 A
PNP low V
CEsat (BISS)
transistor
PBSS9110T
V
CE
(V)
0 −5−4−2 −3−1
001aaa384
−0.8
−1.2
−0.4
−1.6
−2
I
C
(A)
0
I
B
(mA) = −45
−40.5
−36
−31.5
−27
−22.5
−18
−13.5
−9
−4.5
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= 45 mA.
(2) I
B
= 40.5 mA.
(3) I
B
= 36 mA.
(4) I
B
= 31.5 mA.
(5) I
B
= 27 mA.
(6) I
B
= 22.5 mA.
(7) I
B
= 18 mA.
(8) I
B
= 13.5 mA.
(9) I
B
= 9 mA.
(10) I
B
= 4.5 mA.
T
amb
= 25 °C.