Datasheet

2004 May 13 6
NXP Semiconductors Product data sheet
100 V, 1 A
PNP low V
CEsat (BISS)
transistor
PBSS9110T
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −80 V; I
E
= 0 A − − −100 nA
V
CB
= −80 V; I
E
= 0 A; T
j
= 150 °C − − −50 μA
I
CES
collector-emitter cut-off current V
CE
= −80 V; V
BE
= 0 A − − −100 nA
I
EBO
emitter-base cut-off current V
EB
= −4 V; I
C
= 0 A − − −100 nA
h
FE
DC current gain V
CE
= −5 V; I
C
= −1 mA 150 − −
V
CE
= −5 V; I
C
= −250 mA 150 − −
V
CE
= −5 V; I
C
= −500 mA; note 1 150 − 450
V
CE
= −5 V; I
C
= −1 A; note 1 125 − −
V
CEsat
collector-emitter saturation voltage I
C
= −250 mA; I
B
= −25 mA − − −120 mV
I
C
= −500 mA; I
B
= −50 mA − − −180 mV
I
C
= −1 A; I
B
= −100 mA; note 1 − − −320 mV
R
CEsat
equivalent on-resistance I
C
= −1 A; I
B
= −100 mA; note 1 − 170 320 mΩ
V
BEsat
base-emitter saturation voltage I
C
= −1 A; I
B
= −100 mA − − −1.1 V
V
BEon
base-emitter turn-on voltage V
CE
= −5 V; I
C
= −1 A − − −1 V
f
T
transition frequency V
CE
= −10 V; I
C
= −50 mA;
f
= 100 MHz
100 − − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= I
e
= 0 A;
f
= 1 MHz
− − 17 pF