Datasheet

2004 May 13 4
NXP Semiconductors Product data sheet
100 V, 1 A
PNP low V
CEsat (BISS)
transistor
PBSS9110T
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm
2
collector mounting pad.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to
ambient
in free air; note 1 417 K/W
in free air; note 2 260 K/W
001aaa814
10
1
10
2
10
3
Z
th
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
(10)
(1)
(2)
(3)
(4)
(5)
(6)
(9)
(8)
(7)
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
(1) δ = 1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
Mounted on printed-circuit board; 1 cm
2
collector mounting pad.