Datasheet

2004 May 13 3
NXP Semiconductors Product data sheet
100 V, 1 A
PNP low V
CEsat (BISS)
transistor
PBSS9110T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm
2
collector mounting pad.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter − −120 V
V
CEO
collector-emitter voltage open base − −100 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −1 A
I
CM
peak collector current limited by T
j(max)
− −3 A
I
B
base current (DC) − −300 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 300 mW
T
amb
≤ 25 °C; note 2 − 480 mW
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
T
amb
(°C)
0
(1)
(2)
16012040 80
001aaa811
200
400
600
P
tot
(mW)
0
Fig.2 Power derating curves.
(1) 1 cm
2
collector mounting pad.
(2) Standard footprint.