Datasheet

2004 May 13 2
NXP Semiconductors Product data sheet
100 V, 1 A
PNP low V
CEsat (BISS)
transistor
PBSS9110T
FEATURES
• SOT23 package
• Low collector-emitter saturation voltage V
CEsat
• High collector current capability: I
C
and I
CM
• Higher efficiency leading to less heat generation
APPLICATIONS
• Major application segments
– Automotive 42 V power
– Telecom infrastructure
– Industrial
• DC-to-DC conversion
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers
and motors).
DESCRIPTION
PNP low V
CEsat
transistor in a SOT23 plastic package.
NPN complement: PBSS8110T.
MARKING
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER MARKING CODE
(1)
PBSS9110T *U7
SYMBOL PARAMETER MAX. UNIT
V
CEO
collector-emitter voltage −100 V
I
C
collector current (DC) −1 A
I
CM
repetitive peak collector
current
−3 A
R
CEsat
equivalent on-resistance 320 mΩ
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
21
3
MAM256
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME DESCRIPTION VERSION
PBSS9110T − plastic surface mounted package; 3 leads SOT23