Datasheet

PBSS9110D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 22 November 2009 5 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −80 V; I
E
=0A - - −100 nA
V
CB
= −80 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
CES
collector-emitter cut-off
current
V
CE
= −80 V;
V
BE
=0V
--−100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −4V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −5V;
I
C
= −1mA
150 - -
V
CE
= −5V;
I
C
= −250 mA
150 - -
V
CE
= −5V;
I
C
= −0.5 A
[1]
150 - 450
V
CE
= −5V; I
C
= −1A
[1]
125 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= −250 mA;
I
B
= −25 mA
--−120 mV
I
C
= −0.5 A;
I
B
= −50 mA
[1]
--−180 mV
I
C
= −1A;
I
B
= −100 mA
[1]
--−320 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −1A;
I
B
= −100 mA
[1]
- 170 320 mΩ
V
BEsat
base-emitter saturation
voltage
I
C
= −1A;
I
B
= −100 mA
[1]
--−1.1 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −5V; I
C
= −1A - - −1.0 V
t
d
delay time V
CC
= −10 V;
I
C
= −0.5 A;
I
Bon
= −0.025 A;
I
Boff
=0.025A
-20- ns
t
r
rise time - 60 - ns
t
on
turn-on time - 80 - ns
t
s
storage time - 290 - ns
t
f
fall time - 120 - ns
t
off
turn-off time - 410 - ns
f
T
transition frequency V
CE
= −10 V;
I
C
= −50 mA;
f = 100 MHz
100 - - MHz
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A;
f=1MHz
- - 17 pF