Datasheet

PBSS9110D_3 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 03 — 22 November 2009 2 of 13
NXP Semiconductors
PBSS9110D
100 V, 1 A PNP low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
1, 2, 5, 6 collector
3base
4emitter
132
4
56
4
3
1, 2, 5, 6
sym030
Table 3. Ordering information
Type number Package
Name Description Version
PBSS9110D SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codes
Type number Marking code
PBSS9110D A7
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - −120 V
V
CEO
collector-emitter voltage open base - −100 V
V
EBO
emitter-base voltage open collector - −5V
I
C
collector current - −1A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
- −3A
I
B
base current - −0.3 A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-300mW
[2]
-550mW
[3]
-700mW