Datasheet

PBSS8510PA All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 1 — 17 May 2010 6 of 15
NXP Semiconductors
PBSS8510PA
100 V, 5.2 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
V
CB
=80V; I
E
= 0 A - - 100 nA
V
CB
=80V; I
E
=0A;
T
j
= 150 °C
--50μA
I
CES
collector-emitter
cut-off current
V
CE
=80V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base
cut-off current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=2V
[1]
I
C
= 0.5 A 180 285 -
I
C
= 1 A 150 235 -
I
C
= 2 A 95 145 -
I
C
=6A 30 45 -
V
CEsat
collector-emitter
saturation voltage
I
C
=0.5A; I
B
=50mA
[1]
- 3040mV
I
C
=1A; I
B
=50mA
[1]
- 5575mV
I
C
=1A; I
B
=10mA
[1]
- 120 160 mV
I
C
=4A; I
B
= 400 mA
[1]
- 170 220 mV
I
C
=5.2A; I
B
= 260 mA
[1]
- 250 340 mV
R
CEsat
collector-emitter
saturation resistance
I
C
=5.2A; I
B
= 260 mA
[1]
- 4865mΩ
V
BEsat
base-emitter
saturation voltage
I
C
=1A; I
B
=10mA
[1]
- 0.79 0.9 V
I
C
=5.2A; I
B
= 260 mA
[1]
-11.1V
V
BEon
base-emitter
turn-on voltage
V
CE
=2V; I
C
=2A
[1]
- 0.77 0.9 V
t
d
delay time V
CC
=9V; I
C
=2A;
I
Bon
=0.1A;
I
Boff
= −0.1 A
-24-ns
t
r
rise time - 246 - ns
t
on
turn-on time - 270 - ns
t
s
storage time - 735 - ns
t
f
fall time - 230 - ns
t
off
turn-off time - 965 - ns
f
T
transition frequency V
CE
=10V;
I
C
=100mA;
f=100MHz
95 150 - MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- 16.5 20 pF