Datasheet

PBSS8110Z_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 8 January 2007 6 of 14
NXP Semiconductors
PBSS8110Z
100 V, 1 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=80V; I
E
= 0 A - - 100 nA
V
CB
=80V;I
E
=0A;
T
j
= 150 °C
--50µA
I
CES
collector-emitter cut-off
current
V
CE
=80V;
V
BE
=0V
- - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
=4V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=10V;
I
C
=1mA
150 - -
V
CE
=10V;
I
C
= 250 mA
150 - 500
V
CE
=10V;
I
C
= 0.5 A
[1]
100 - -
V
CE
=10V; I
C
=1A
[1]
80 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 100 mA;
I
B
=10mA
- - 40 mV
I
C
= 500 mA;
I
B
=50mA
[1]
- - 120 mV
I
C
=1A;
I
B
= 100 mA
[1]
- - 200 mV
R
CEsat
collector-emitter
saturation resistance
I
C
=1A;
I
B
= 100 mA
[1]
- 160 200 mΩ
V
BEsat
base-emitter saturation
voltage
I
C
=1A;
I
B
= 100 mA
[1]
- - 1.05 V
V
BEon
base-emitter turn-on
voltage
V
CE
=10V; I
C
=1A
[1]
- - 0.9 V
t
d
delay time V
CC
=10V;
I
C
= 0.5 A;
I
Bon
= 0.025 A;
I
Boff
= −0.025 A
-25- ns
t
r
rise time - 220 - ns
t
on
turn-on time - 245 - ns
t
s
storage time - 365 - ns
t
f
fall time - 185 - ns
t
off
turn-off time - 550 - ns
f
T
transition frequency V
CE
=10V;
I
C
=50mA;
f = 100 MHz
100 - - MHz
C
c
collector capacitance V
CB
=10V;
I
E
=i
e
=0A;
f=1MHz
- - 7.5 pF