Datasheet

PBSS8110Z_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 8 January 2007 5 of 14
NXP Semiconductors
PBSS8110Z
100 V, 1 A NPN low V
CEsat
(BISS) transistor
FR4 PCB, mounting pad for collector 6 cm
2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa821
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0