Datasheet

PBSS8110Z_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 8 January 2007 3 of 14
NXP Semiconductors
PBSS8110Z
100 V, 1 A NPN low V
CEsat
(BISS) transistor
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
amb
(°C)
0 16012040 80
001aaa508
0.8
0.4
1.2
1.6
P
tot
(W)
0
(1)
(2)
(3)
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 192 K/W
[2]
- - 125 K/W
[3]
--89K/W
R
th(j-sp)
thermal resistance from
junction to solder point
--17K/W