Datasheet

PBSS8110Z_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 8 January 2007 2 of 14
NXP Semiconductors
PBSS8110Z
100 V, 1 A NPN low V
CEsat
(BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
1 base
2 collector
3 emitter
4 collector
132
4
sym016
2, 4
3
1
Table 3. Ordering information
Type number Package
Name Description Version
PBSS8110Z SC-73 plastic surface-mounted package with increased heat sink;
4 leads
SOT223
Table 4. Marking codes
Type number Marking code
PBSS8110Z PB8110
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 120 V
V
CEO
collector-emitter voltage open base - 100 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current - 1 A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
-3A
I
B
base current - 0.3 A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 0.65 W
[2]
-1W
[3]
- 1.4 W