Datasheet

PBSS8110Z_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 8 January 2007 12 of 14
NXP Semiconductors
PBSS8110Z
100 V, 1 A NPN low V
CEsat
(BISS) transistor
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBSS8110Z_2 20070108 Product data sheet - PBSS8110Z_1
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity guidelines of
NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 1.1 “General description”: amended
• Section 1.2 “Features”: amended
• Section 1.3 “Applications”: amended
• Table 1 “Quick reference data”: conditions for I
CM
peak collector current adapted
• Table 1: R
CEsat
equivalent on-resistance redefined to collector-emitter saturation resistance
• Table 2 “Pinning”: simplified outline drawing amended
• Table 4 “Marking codes”: amended
• Table 5 “Limiting values”: conditions for I
CM
peak collector current adapted
• Table 5: T
amb
operating ambient temperature redefined to ambient temperature
• Table 6 “Thermal characteristics”: amended
• Table 6: R
th(j-s)
thermal resistance from junction to soldering point redefined to R
th(j-sp)
thermal
resistance from junction to solder point
• Figure 2: amended
• Figure 2: Z
th
transient thermal impedance redefined to Z
th(j-a)
transient thermal impedance from
junction to ambient
• Figure 2: t
p
pulse time redefined to pulse duration
• Figure 3 and 4: added
• Table 7: R
CEsat
equivalent on-resistance redefined to collector-emitter saturation resistance
• Table 7: switching times added
• Figure 5, 6, 8 and 12: amended
• Section 8 “Test information”: added
• Figure 15: superseded by minimized package outline drawing
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
PBSS8110Z_1 20040426 Product data sheet - -