Datasheet

PBSS8110X_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 5 of 15
NXP Semiconductors
PBSS8110X
100 V, 1 A NPN low V
CEsat
(BISS) transistor
FR4 PCB; mounting pad for collector 6cm
2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
006aaa411
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
1
10
5
1010
2
10
4
10
2
10
1
t
p
(s)
10
3
10
3
1
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
duty cycle =
006aaa410
10
1
10
2
Z
th(j-a)
(K/W)
10
1
10
5
1010
2
10
4
10
2
10
1
t
p
(s)
10
3
10
3
1
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
duty cycle =