Datasheet

PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 8 of 12
NXP Semiconductors
PBSS8110D
100 V, 1 A NPN low V
CEsat
(BISS) transistor
T
amb
=25°CI
C
/I
B
=10
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
Fig 12. Equivalent on-resistance as a function of
collector current; typical values
I
C
/I
B
= 20; T
amb
=25°CI
C
/I
B
= 50; T
amb
=25°C
Fig 13. Equivalent on-resistance as a function of
collector current; typical values
Fig 14. Equivalent on-resistance as a function of
collector current; typical values
V
CE
(V)
054231
001aaa496
0.8
1.2
0.4
1.6
2
I
C
(A)
0
31.5
24.5
17.5
10.5
28
21
14
7
3.5
I
B
(mA) = 35
001aaa501
I
C
(mA)
10
−1
10
4
10
3
110
2
10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
(1)
(2)
(3)
001aaa502
I
C
(mA)
10
−1
10
4
10
3
110
2
10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1
001aaa503
I
C
(mA)
10
−1
10
4
10
3
110
2
10
1
10
10
2
10
3
R
CEsat
(Ω)
10
−1