Datasheet

PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 7 of 12
NXP Semiconductors
PBSS8110D
100 V, 1 A NPN low V
CEsat
(BISS) transistor
I
C
/I
B
= 50; T
amb
=25°CI
C
/I
B
=10
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
I
C
/I
B
= 20; T
amb
=25°CI
C
/I
B
= 50; T
amb
=25°C
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
Fig 10. Base-emitter saturation voltage as a function
of collector current; typical values
001aaa506
10
3
10
2
10
4
V
CEsat
(mV)
10
I
C
(mA)
10
−1
10
4
10
3
110
2
10
001aaa498
1200
800
1000
400
600
V
BEsat
(mV)
200
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
001aaa499
1200
1000
800
600
V
BEsat
(mV)
400
I
C
(mA)
10
−1
10
4
10
3
110
2
10
001aaa500
800
600
1000
V
BEsat
(mV)
400
I
C
(mA)
10
−1
10
4
10
3
110
2
10