Datasheet

PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 5 of 12
NXP Semiconductors
PBSS8110D
100 V, 1 A NPN low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test t
p
≤ 300 μs; δ ≤ 0.02.
Table 7. Characteristics
T
j
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=80V; I
E
= 0 A - - 100 nA
V
CB
=80V; I
E
=0A;
T
j
= 150 °C
--50μA
I
CES
collector-emitter
cut-off current
V
CE
=80V; V
BE
= 0 V - - 100 nA
I
EBO
emitter-base cut-off
current
V
EB
=4V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=10V; I
C
= 1 mA 150 - -
V
CE
=10V; I
C
= 250 mA 150 - 500
V
CE
=10V; I
C
=0.5A
[1]
100 - -
V
CE
=10V; I
C
=1A
[1]
80 - -
V
CEsat
collector-emitter
saturation voltage
I
C
=100mA; I
B
=10mA - - 40 mV
I
C
=500mA; I
B
=50mA - - 120 mV
I
C
=1A; I
B
= 100 mA - - 200 mV
R
CEsat
equivalent
on-resistance
I
C
=1 A; I
B
= 100 mA
[1]
- 160 200 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
=1 A; I
B
= 100 mA - - 1.05 V
V
BEon
base-emitter turn-on
voltage
V
CE
=10V; I
C
=1A - - 0.9 V
f
T
transition frequency V
CE
=10V; I
C
=50mA;
f=100MHz
100 - - MHz
C
c
collector capacitance V
CB
=10V; I
E
=I
e
=0A;
f=1MHz
--7.5pF