Datasheet

PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 4 of 12
NXP Semiconductors
PBSS8110D
100 V, 1 A NPN low V
CEsat
(BISS) transistor
6. Thermal characteristics
[1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 1cm
2
collector mounting pad.
[3] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, 6cm
2
collector mounting pad.
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction to ambient in free air
[1]
416 K/W
[2]
227 K/W
[3]
178 K/W
R
th(j-s)
thermal resistance from junction to
soldering point
in free air
[1]
83 K/W
Mounted on FR4 PCB; standard footprint
(1) δ =1
(2) δ =0.75
(3) δ =0.5
(4) δ =0.33
(5) δ =0.2
(6) δ =0.1
(7) δ =0.05
(8) δ =0.02
(9) δ =0.01
(10) δ =0
Fig 2. Transient thermal impedance as a function of pulse time; typical values
001aaa494
10
1
10
2
10
3
Z
th
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
(5)
(6)
(7)
(8)
(10)
(9)
(1)
(2)
(3)
(4)