Datasheet

PBSS8110D_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 11 December 2009 10 of 12
NXP Semiconductors
PBSS8110D
100 V, 1 A NPN low V
CEsat
(BISS) transistor
9. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBSS8110D_2 20091211 Product data - PBSS8110D_1
Modifications:
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Table 2 “Discrete pinning: amended
Figure 3 “DC current gain as a function of collector current; typical values: updated
Figure 11: updated
Figure 15 “Package outline: updated
PBSS8110D_1 20040423 Product data - -