Datasheet

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1. Product profile

1.1 General description

NPN low V

CEsat

transistor in a plastic SOT457 (SC-74) package.

1.2 Features

 SOT457 package

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 High efficiency, leading to less heat generation

1.3 Applications

 Major application segments:

 Automotive 42 V power

 Telecom infrastructure

 Industrial

 DC-to-DC converter

 Peripheral driver

 Driver in low supply voltage applications (e.g. lamps and LEDs)

 Inductive load drivers (e.g. relays, buzzers and motors)

1.4 Quick reference data

PBSS8110D

100 V, 1 A NPN low V

CEsat

(BISS) transistor

Rev. 02 — 11 December 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage - - 100 V

collector current (DC) - - 1 A

peak collector current - - 3 A

CEsat

equivalent on-resistance - - 200 mΩ

Summary of content (12 pages)

PAGE 1
PBSS8110D 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation 1.
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PBSS8110D NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2. Discrete pinning Pin Description 1, 2, 5, 6 collector 3 base 4 emitter Simplified outline 6 5 Symbol 4 1, 2, 5, 6 3 1 2 3 4 sym014 3. Ordering information Table 3. Ordering information Type number Package PBSS8110D Name Description Version - plastic surface mounted package; 6 leads SOT457 4. Marking Table 4.
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PBSS8110D NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PBSS8110D NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Rth(j-a) thermal resistance from junction to soldering point Rth(j-s) in free air Typ Unit [1] 416 K/W [2] 227 K/W [3] 178 K/W [1] 83 K/W [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
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PBSS8110D NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified.
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PBSS8110D NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa497 600 001aaa495 1000 VBE (mV) hFE (1) 800 (1) 400 (2) (2) 600 (3) 200 (3) 400 0 10−1 1 102 10 103 104 IC (mA) 200 10−1 VCE = 10 V 1 102 103 104 IC (mA) VCE = 10 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. 10 (3) Tamb = 100 °C DC current gain as a function of collector current; typical values 001aaa504 1 Fig 4.
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PBSS8110D NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa506 104 VCEsat (mV) 001aaa498 1200 VBEsat (mV) 1000 (1) 103 800 (2) (3) 600 102 400 10 10−1 1 10 102 103 104 IC (mA) 200 10−1 IC/IB = 50; Tamb = 25 °C 1 10 102 103 104 IC (mA) IC/IB = 10 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values 001aaa499 1200 VBEsat (mV) Fig 8.
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PBSS8110D NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa496 2 IB (mA) = 35 31.5 28 24.5 21 17.5 14 IC (A) 1.6 1.2 001aaa501 103 RCEsat (Ω) 102 10.5 10 7 0.8 3.5 1 0.4 0 0 1 2 3 4 5 10−1 10−1 (1) (2) (3) 1 10 102 VCE (V) Tamb = 25 °C 103 104 IC (mA) IC/IB = 10 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 11. Collector current as a function of collector-emitter voltage; typical values 001aaa502 103 Fig 12.
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PBSS8110D NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 8. Package outline Plastic surface-mounted package (TSOP6); 6 leads D SOT457 E B y A HE 6 5 X v M A 4 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT mm A A1 bp c D E e HE Lp Q v w y 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.
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PBSS8110D NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS8110D_2 20091211 Product data - PBSS8110D_1 Modifications: PBSS8110D_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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PBSS8110D NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 10. Legal information 10.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBSS8110D NXP Semiconductors 100 V, 1 A NPN low VCEsat (BISS) transistor 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information .