Datasheet

PBSS5630PA_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 19 March 2010 6 of 15
NXP Semiconductors
PBSS5630PA
30 V, 6 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
 300 s; 0.02.
Table 7. Characteristics
T
amb
=25  C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
V
CB
= 24 V; I
E
=0A - - 100 nA
V
CB
= 24 V; I
E
=0A;
T
j
= 150 C
--50 A
I
CES
collector-emitter
cut-off current
V
CE
= 24 V; V
BE
=0V - - 100 nA
I
EBO
emitter-base
cut-off current
V
EB
= 5V; I
C
=0A - - 100 nA
h
FE
DC current gain V
CE
= 2V
[1]
I
C
= 0.5 A 230 345 -
I
C
= 1 A 220 320 -
I
C
= 2 A 190 275 -
I
C
= 6 A 110 155 -
V
CEsat
collector-emitter
saturation voltage
I
C
= 0.5 A; I
B
= 50 mA
[1]
- 25 40 mV
I
C
= 1A; I
B
= 50 mA
[1]
- 50 80 mV
I
C
= 1A; I
B
= 10 mA
[1]
- 80 130 mV
I
C
= 2A; I
B
= 20 mA
[1]
- 135 210 mV
I
C
= 3A; I
B
= 30 mA
[1]
- 215 325 mV
I
C
= 4A; I
B
= 400 mA
[1]
- 150 230 mV
I
C
= 6A; I
B
= 300 mA
[1]
- 235 350 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= 6A; I
B
= 300 mA
[1]
- 3958m
V
BEsat
base-emitter
saturation voltage
I
C
= 1A; I
B
= 10 mA
[1]
- 0.75 0.9 V
I
C
= 6A; I
B
= 300 mA
[1]
- 1.03 1.1 V
V
BEon
base-emitter
turn-on voltage
V
CE
= 2V; I
C
= 2A
[1]
- 0.76 0.9 V
t
d
delay time V
CC
= 9V; I
C
= 2A;
I
Bon
= 0.1 A;
I
Boff
=0.1A
-19-ns
t
r
rise time - 59 - ns
t
on
turn-on time - 78 - ns
t
s
storage time - 265 - ns
t
f
fall time - 55 - ns
t
off
turn-off time - 320 - ns
f
T
transition frequency V
CE
= 10 V;
I
C
= 100 mA;
f=100MHz
50 80 - MHz
C
c
collector capacitance V
CB
= 10 V;
I
E
=i
e
=0A; f=1MHz
- 7590pF