Datasheet

2001 Sep 21 6
NXP Semiconductors Product data sheet
40 V low V
CEsat
PNP transistor
PBSS5540Z
handbook, halfpage
0
I
C
(A)
V
CE
(V)
−2
−10
0
−2
−4
−6
−8
−0.4 −0.8 −1.2 −1.6
MGU392
(10)
(9)
(8)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
(1) I
B
= −150 mA.
(2) I
B
= −135 mA.
(3) I
B
= −120 mA.
(4) I
B
= −105 mA.
(5) I
B
= −90 mA.
(6) I
B
= −75 mA.
(7) I
B
= −60 mA.
(8) I
B
= −45 mA.
(9) I
B
= −30 mA.
(10) I
B
= −15 mA.
T
amb
= 25 °C.
handbook, halfpage
10
3
10
2
10
1
10
−1
−10
−1
MGU396
−1 −10
I
C
(mA)
R
CEsat
(Ω)
−10
2
−10
3
−10
4
(1)
(3)
(2)
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
I
C
/I
B
= 20.
(1) T
amb
= 150 °C.
(2) T
amb
= 25 °C.
(3) T
amb
= −55 °C.