Datasheet

2001 Sep 21 4
NXP Semiconductors Product data sheet
40 V low V
CEsat
PNP transistor
PBSS5540Z
CHARACTERISTICS
T
amb
= 25 °C unless otherwise specified.
Note
1. Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current V
CB
= −30 V; I
E
= 0 − − −100 nA
V
CB
= −30 V; I
E
= 0; T
j
= 150 °C − − −50 μA
I
EBO
emitter-base cut-off current V
EB
= −5 V; I
C
= 0 − − −100 nA
h
FE
DC current gain V
CE
= −2 V; I
C
= −500 mA 250 350 −
V
CE
= −2 V; I
C
= −1 A; note 1 200 300 −
V
CE
= −2 V; I
C
= −2 A; note 1 150 250 −
V
CE
= −2 V; I
C
= −5 A; note 1 50 150 −
V
CEsat
collector-emitter saturation voltage I
C
= −500 mA; I
B
= −5 mA − −80 −120 mV
I
C
= −1 A; I
B
= −10 mA − −120 −170 mV
I
C
= −2 A; I
B
= −200 mA − −110 −160 mV
R
CEsat
equivalent on-resistance I
C
= −2 A; I
B
= −200 mA; note 1 − <55 <80 mΩ
V
CEsat
collector-emitter saturation voltage I
C
= −5 A; I
B
= −500 mA − −250 −375 mV
V
BEsat
base-emitter saturation voltage I
C
= −5 A; I
B
= −500 mA − − −1.3 V
V
BEon
base-emitter turn-on voltage V
CE
= −2 V; I
C
= −2 A − −0.8 −1.25 V
f
T
transition frequency I
C
= −100 mA; V
CE
= −10 V;
f
= 100 MHz
60 120 − MHz
C
c
collector capacitance V
CB
= −10 V; I
E
= I
e
= 0;
f
= 1 MHz
− 90 105 pF