Datasheet

2001 Sep 21 2
NXP Semiconductors Product data sheet
40 V low V
CEsat
PNP transistor
PBSS5540Z
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation.
APPLICATIONS
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp
drivers)
• MOSFET driver applications.
DESCRIPTION
PNP low V
CEsat
transistor in a SOT223 plastic package.
NPN complement: PBSS4540Z.
MARKING
TYPE NUMBER MARKING CODE
PBSS5540Z PB5540
PINNING
PIN DESCRIPTION
1 base
2 collector
3 emitter
4 collector
handbook, halfpage
4
123
MAM288
Top view
3
2, 4
1
Fig.1 Simplified outline (SOT223) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX UNIT
V
CEO
emitter-collector voltage −40 V
I
C
collector current (DC) −5 A
I
CM
peak collector current −10 A
R
CEsat
equivalent on-resistance <80 mΩ